半导体物理学

厦门大学是最早创立国家半导体学科的五校联盟之一，具有雄厚的学科基础，为瞄准国际科学前沿与国家战略需求，凝聚了一支有持续创新能力的研究队伍，致力于半导体光电材料及其器件研究，拥有先进的半导体材料生长和器件加工与表征设备，如MOCVD、8英寸SiC外延系统、UHV-CVD、MBE、电子束蒸发仪、光刻机等，在Ge、Si、AlGaN、SiC、ZnO等材料及其器件研发方面已形成较强的国内优势，为我校物理学、材料科学进入全球ESI世界前1%作出了重大贡献。同时，该学科致力于产学研相结合，引领福建省光电产业的发展。

半导体学科承担了国家重大基础性、战略性和前瞻性的多项研究任务，取得了丰硕的成果。研究方向有：（1）高性能Micro-LED芯片与显示；（2）深紫外光电材料和器件；（3）大尺寸SiC外延和功率电子器件；（4）硅基光电子材料和器件；（5）氧化物半导体材料和器件；（6）超宽禁带半导体材料和器件；（7）半导体的量子态调控及输运；（8）二维半导体材料和器件；（9）能量转换材料与器件；（10）新型半导体结构中的光-物质相互作用。

Semiconductor physics

As one of the first five universities in the country to co-found semiconductor physics discipline, Xiamen University has a solid foundation in this field both in teaching and research. Aiming for the international frontier of research and the requirements of national strategy, the university gathered a team of innovative faculties and students focusing on the research of semiconductor materials and the development of semiconductor devices. The university has advanced equipmentsfor growing semiconductor materials and manufacturing semiconductor devices, such as MOCVD, 8" SiC epitaxial system，UHV-CVD, MBE, E-beam, lithography etc. The university's research on Ge, Si, AlGaN, SiC, ZnO and other materials has a strong domestic advantage, contributing significantly to the university's entry into ESI world top 1% in Physics and Material science. Meanwhile, the joint dedication among teaching, research and industry collaboration are promoting the development and boom of the optoelectrical industry in Fujian province of China.

The university's semiconductor discipline has made fruitful achievements by undertaking a number of the nation’s missions in research, including national key fundamental, strategical and perspectiveness projects. Areas of research include: high performance micro-LED display; deep ultraviolet (DUV) photoelectric materials and devices; large area SiC epitaxial and power electronic devices; silicon-based optoelectronic materials and devices; oxide semiconductor materials and devices; ultra-wide bandgap semiconductor materials and devices; quantum state control and transport of semiconductor; 2D semiconductor materials and devices; energy conversion materials and devices; light-matter interactions in novel semiconductor structures, and so on.