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蔡端俊
职称 教授 邮箱 dcai@xmu.edu.cn
办公室 物理楼 405 研究方向 三维半导体、金属纳米线(柱)材料,二维半导体薄层材料,氮化物半导体LED结构器件,先进纳米微观表征技术, 生物蛋白质分子荧光材料研发,微观结构材料模拟计算
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CAI Duanjun

姓名

职称

教授

办公室

物理楼 405

研究领域

三维半导体、金属纳米线(柱)材料,二维半导体薄层材料,

氮化物半导体LED结构器件,先进纳米微观表征技术,

生物蛋白质分子荧光材料研发,微观结构材料模拟计算

教育和工作经历

2016 美国杜克大学化学系 高级访问学者

2015-至今 厦门大学物理科学与技术学院,半导体光电子材料与高效转换器件协同创新中心, 教授 博导

2013 兼任台湾大学电机系、光电资讯工程研究所,客座副教授。

2011-2012 厦门大学物理学系、半导体光子学研究中心,副教授。

2009-2010 兼任法国里昂第一大学,凝聚态及纳米材料研究中心,博士后研究员。

2008-2009 葡萄牙国立科英布拉大学物理学系,计算物理研究中心,博士后研究员。

2007-2008 台湾大学物理学系,博士后研究员。

2006 厦门大学物理学系凝聚态专业,理学博士。

代表性文章或专著

 F. P. Sun, Z. R. Hao, G. Z. Liu, C. P. Wu, S. Q. Lu, S. R. Huang, C. Liu, Q. M. Hong, X. H. Chen, D. J. Cai*, and J. Y. Kang, “p-type conductivity of hexagonal boron nitride as dielectrically tunable monolayer: modulation doping with magnesium”, Nanoscale 10, 4361-4369 (2018).

 Y. Y. Huang, Z. X. Huang, Z. B. Zhong, X. Yang, Q. M. Hong, H. C. Wang, S. R. Huang, N. Gao, X. H. Chen, D. J. Cai*, and J. Y. Kang,“Highly transparent light emitting diodes on graphene encapsulated Cu nanowires network”, Scientific Reports 8, 13721 (2018).

 Wael Z. Tawfik, Sung Oh Cho, Jun-Seok Ha, Sang-Wan Ryu, D. J. Cai, and June Key Lee, “Electrochemical Potentiostatic Activation Method for GaN-Based Green Vertical-LEDs”, ECS Journal of Solid State Science and Technology 7, Q47-Q51 (2018).

 H. C. Wang, C. P. Wu, Y. Y. Huang, F. P. Sun, N. Lin, A. M. Soomro, Z. B. Zhong, X. D. Yang, X. H. Chen, J. Y. Kang, and D. J. Cai*, “One-pot synthesis of superfine core-shellCu@metalnanowires for highly tenacious transparent LED dimmer”, ACS Applied Materials & Interfaces 8, 28709 (2016).

 C. P. Wu, A. M. Soomro, F. P. Sun, H. C. Wang, Y. Y. Huang, J. J. Wu, C. Liu, X. D. Yang, N. Gao, X. H. Chen, J. Y. Kang, and D. J. Cai*, "Large-roll growth of 25-inch hexagonal BN monolayer film for self-release buffer layer of free-standing GaN wafer", Scientific Reports 6, 34766 (2016).

 T. C. Zheng, W. Lin, R. Liu, D. J. Cai, J. C. Li, S. P. Li and J. Y. Kang*, “Improved p-type conductivity in Al-rich AlGaN using multidimensional Mg-doped superlattices”, Scientific Reports 6, 21897 (2016,).

 H. M. Xu, H. C. Wang, C. P. Wu, N. Lin, A. M. Soomro, H. Z. Guo, C. Liu, X. D. Yang, Y. P. Wu, D. J. Cai*, and J. Y. Kang, "Direct synthesis of graphene 3D-coated Cu nanosilks network for antioxidant transparent conducting electrode", Nanoscale 7, 10613–10621 (2015).

 X. H. Chen, H. M. Xu, N. Lin, F. C. Xu , H. Y. Chen, D. J. Cai* and J. Y. Kang, "Ideal square quantum wells achieved in AlGaN/GaN superlattices using ultrathin blocking-compensation pair", Applied Physics Letters 106,111604 (2015).

 N. Lin, J. J. Wu, H. M. Xu, N. L. Liu, T. C. Zheng, W. Lin, C. Liu and D. J. Cai*, “In situ self-release of thick GaN wafer from sapphire substrate via graded strain field engineering”, Applied Physics Letters 104, 012110 (2014).

 H. Z. Guo, N. Lin, Y. Z. Chen, Z. W. Wang, Q. S. Xie, T. C. Zheng, N. Gao, S. P. Li, J. Y. Kang, D. J. Cai* and D. L. Peng, “Copper Nanowires as Fully Transparent Conductive Electrodes”, Scientific Reports 3, 2323 (2013).

 D. J. Cai*, M. A. L. Marques, and F. Nogueira, “Full Color Modulation of Firefly Luciferase through Engineering with Unified Stark Effect”. Journal of Physical Chemistry B 117 , 13725–13730 (2013).

 W. Lin, W. Jiang, N. Gao, D. J. Cai*, S. P. Li, and J. Y. Kang, “Optical isotropization of anisotropic wurtzite Al-rich AlGaN via asymmetric modulation with ultrathin (GaN)m/(AlN)n superlattices”, Laser & Photonics Reviews 7, 572 (2013).

 B. B. Zhang, W. Lin, S. P. Li, Y. Zheng, Xu. Yang, D. J. Cai*, and J. Y. Kang, “Ohmic contact to n-AlGaN through bonding state transition at TiAl interface”, Journal of Applied Physics 111, 113710 (2012).

 D. J. Cai, M. A. L. Marques and F. Nogueira, “Accurate color tuning of firefly chromophore by modulation of local polarization electrostatic fields”, Journal of Physical Chemistry B 115, 329 (2011).

 D. J. Cai, F. C. Xu, J. C. Li, H. Y. Chen, and J. Y. Kang, “Non-contact nanoscale electrical measurements for embedded intrinsic charges by Auger electron spectroscopy”, Nanotechnology 21, 015707 (2010).

 D. J. Cai, M. A. L. Marques, B. F. Milne and F. Nogueira, “Bio-heterojunction effect on fluorescence origin and efficiency improvement of firefly chromophores”, Journal of Physical Chemistry Letters, 1, 2781 (2010).

 D. J. Cai, Y. Y. Huang, and H. C. Wang, 一种金属纳米线的透明薄膜LED调光器制备方法 (Fabrication method of transparent LED dimmer film with metal nanowires), China Invention Patent No. ZL201611211603.1(Issued on Jan. 22, 2019).

 D. J. Cai, F. P. Sun, and A. M. Soomro, 一种透明柔性的压电式纳米发电机的制备方法(Fabrication Method for flexible transparent piezoelectric nanogenerator), China Invention Patent No. ZL201710154030.1 (Issued on Jan. 09, 2019).

 D. J. Cai, F. P. Sun, and A. M. Soomro, 一种衬底上直接生长氧化锌纳米柱阵列的方法 (Method for direct growth of ZnO nanorod array on arbitary substrate), China Invention Patent No. ZL 201710154036.9 (Issued on Jan. 01, 2019).

 D. J. Cai, 一种彩色轻质导电纺织线的制作方法(Fabrication method for color light-weight conductive threads), China Invention Patent No. ZL 201610843658.8(Issued on Nov. 30, 2018).

 D. J. Cai, C. P. Wu, A. M. Soomro, and J. Y. Kang, 一种在基底上制备晶片级大尺寸六方氮化硼的方法 (Method for growth of wafer-scale hexagonal BN monolayer), China Invention Patent No. ZL201510039073.6 (Issued on Nov. 28, 2017).

 D. J. Cai, H. C. Wang, N. Lin, H. M. Xu, C. P. Wu, J. Ma, H. Z. Guo, and J. Y. Kang, 一种合金包裹铜纳米线制备多功能核壳纳米材料的方法(Coating technique of alloy on Cu nanowires for multifunctional core-shell nanostructures), China Invention Patent No. ZL201510385468.1 (Issued on Feb. 22, 2017).

 D. J. Cai, A. M. Soomro, and C. P. Wu, H. M. Xu 一种直接在Si衬底上生长六方氮化硼二维薄膜的方法 (Method for direct growth of hexagonal BN 2D film on Si substrate), China Invention Patent ZL201410500423.X (Issued on Jun. 29, 2016).

 D. J. Cai, H. M. Xu, Y. P. Wu, N. Lin and H. Z. Guo, 一种石墨烯碳膜包裹的铜纳米丝网络的制备方法 (Synthesis of Cu nanosilk networks capsulated by Graphene), China Invention Patent No. ZL201410327046.4 (Issued on Mar. 09, 2016).

 D. J. Cai, X. H. Chen and J. Y. Kang, 一种陡峭界面GaN/AlGaN超晶格的制备方法 (A scheme to fabricate abrupt GaN/AlGaN superlattices), China Invention Patent No. ZL201310030135.8 (Issued on Mar. 04, 2015).

科研基金

国家重点研发计划,“固态紫外光源量子应变体系结构设计与机理研”

国家自然科学基金, “核壳结构合金Cu纳米线合成及AlGaN基深紫外LED透明欧姆电极研究”

国家自然科学基金,“AlGaN 基量子阱的界面陡峭技术及其增强量子限制效应”

任教课程

《LED与光伏系统》 专业选修课程、《半导体中的缺陷》专业选修课程、《半导体科学与技术讲座》专业选修课程、《国剧赏析》 全校性通识课程、《行止天涯》 全校性通识课程

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