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康俊勇
职称 教授 邮箱 jykang@xmu.edu.cn
办公室 研究方向 凝聚态物理、半导体材料物理、表面和界面物理、量子结构材料物理、微电子学与固体电子学、大功率LED、深紫外LED、新型太阳能电池
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Kang Junyong

姓名

职称

教授

研究领域

凝聚态物理、半导体材料物理、表面和界面物理、量子结构材料物理、微电子学与固体电子学、大功率LED、深紫外LED、新型太阳能电池

教育和工作经历

康俊勇博士、教授(博士生指导教师)、厦门大学“物理学”一级学科博士点、“微电子学与固体电子学”二级学科工科博士点学术带头人、“凝聚态物理”国家重点学科主要学术带头人。长期从事化合物半导体晶体生长及其特性表征的教学和科研工作。培养研究生60余人,所指导的10多篇博士论文中,获得全国优秀博士学位论文1篇,提名全国优秀博士论文1篇,福建省优秀博士论文奖一等奖3篇等;带领学生先后获得2017年国际第三代半导体创新创业大赛厦门赛区团队第一名、2019全国移动互联创新大赛福建赛区一等奖等,荣获“全国优秀博士学位论文指导教师”、“厦门市优秀教师”、“宝钢优秀教师奖”、“卢嘉锡优秀导师奖”等称号。

主持过国家“973”、“863”、国家自然科学基金重大研究计划和重点项目等数十项研究。先后研发了首台强磁场晶体生长、纳米级空间分辨率应变和电荷测试、原位纳米结构综合测试等设备。在高Al组分AlGaN量子结构等设计与生长及其深紫外表面等离子激元光源研发方面,取得了系列开拓性成果,被同行称为“表面等离子激元深紫外光子学研究第一人”。在新型太阳能电池研发方面,首次将宽带隙半导体调制到对太阳光中红外线有效吸收,该成果2012年以“厦大研发新型太阳能光伏电池”名称被列入最新十二大太阳能光伏电池新技术。在低维晶格及其耦合诱导的半导体新功能及其应用方面,取得多项重要的研究进展,获得了国内外同行的高度评价。先后在Nature Materials、Nature Communications、Nano Letters、Advanced Materials、Laser Photonics & Reviews等国际著名学术刊物上发表论文300余篇,他引约4500次;授权国家发明专利50余项;部分成果完成了向重要企业的技术转让,并实现产品产业化,年产值十多亿元,部分产品在国家航空航天领域得到广泛应用。荣获国家政府特殊津贴、福建省科技进步一等奖、厦门市科技进步一等奖等。

先后建立了超高真空、极低温、强磁场、晶体生长及原位综合测量等实验条件;建立了福建省半导体材料及应用重点实验室、半导体微纳光电子材料与器件教育部工程研究中心,被誉为“厦门大学实验物理奠基人”。荣获“福建省先进工作者”、“厦门市劳动模范”等称号。同时,推动了国家半导体照明产业化基地(厦门)的建设工作,牵头与行业龙头企业等创建了福建省半导体光电材料及其高效转换器件协同创新中心,为厦门成为国家乃至世界的半导体产业重镇做出重要贡献,荣获“厦门市科技创新杰出人才”。

获奖:

2014年获全国优秀博士学位论文指导教师

2017年以第一完成人获福建省科技进步一等奖

2017年以第一完成人获厦门市科技进步一等奖

2014年获国家政府特殊津贴

2018年获福建省先进工作者

2014年获厦门市劳动模范

2004年厦门市优秀教师

2019年厦门市科技创新杰出人才

2018年获宝钢优秀教师奖

2015年获卢嘉锡优秀导师奖

学术兼职:

国家自然科学基金委员会专家评审组专家

中国真空学会理事、常务理事

中国光学学会理事

中国物理学会:半导体专业委员会、表面与界面物理专业委员会委员

中国有色金属学会:宽禁带半导体专业委员会副主任委员

福建省光电行业协会副会长

代表性文章或专著

1. Fabrication of high-voltage flip chip deep ultraviolet light-emitting diodes using an inclined sidewalls structure, Phys. Status Solidi A (2019) 1900059.

2. The construction of integrated Si-based micro proton exchange membrane fuel cells with improved performances, Nano Energy 61 (2019) 604.

3. Integral monolayer-scale featured digital-alloyed AlN/GaN superlattices using hierarchical growth units, Cryst. Growth Des. 19(3) (2019) 1720.

4. Analysis and Reduction of Obtuse Triangular Defects on 150-mm 4A degrees 4H-SiC Epitaxial Wafers, J. Electronic Materials 47(9) (2018) 5109.

5. In-plane Anisotropy of Quantum Transport in Artificial Two-dimensional Au Lattices, Nano Lett. 18(3) (2018) 1724.

6. Characteristics of InN epilayers grown with H2-assistance, AIP Advances 7 (2017) 115207.

7. Interfaces between hexagonal andcubic oxides and their structurealternatives, Nature Com. 8 (2017) 1474.

8. Abnormal radiative interband transitions in high-Al-content AlGaN quantum wells induced by polarized orbitals, ACS Photonics, 4 (2017) 2197.

9. Effect of electrical injection-induced stress on interband transitions in high Al content AlGaN MQWs, RSC Adv., 7 (2017) 55157.

10. Effect of Surface Morphology and Magnetic Impurities on theElectronic Structure in Cobalt-Doped BaFe2As2 Superconductors, Nano Lett. 17 (2017) 1642.

11. Reduction of epitaxial defects on 4o-off 4H-SiC homoepitaxial growth by optimizing in-situ etching process, Superlattices and Microstructures 99 (2016) 145.

12. Improved p-type conductivity in Al-rich AlGaN using multidimensional Mg-doped superlattices, Scientific Reports 6 (2016) 21897.

13. Effects of nitrogen dopants on the atomic step kinetics and electronic structures of O-polar ZnO, Nanoscale, 2016, 8, 4381.

14. Effects of thermally-induced changes of Cu grainson domain structure and electrical performanceof CVD-grown grapheme, Nanoscale8 (2016) 930.

15. Direct Observation of the Biaxial Stress Effect on Efficiency Droop in GaN-based Light-emitting Diode under Electrical Injection, Scientific Reports 5 (2015) 17227.

16. Ultrawide photoresponse in ZnO/ZnSe coaxialnanowires with a threshold of 0.8 eV, International Journal of Hydrogen Energy 40 (2015) 10788.

17. Electro-optic Coefficient Enhancement of AlxGa1−xN via Multiple FieldModulations, ACS Appl. Mater. Interfaces 2015, 7, 17707.

18. Novel Evolution Process of Zn-Induced Nanoclusters on Si(111)-(77) Surface, Nano-Micro Lett. 7(2) (2015)194.

19. Performance evaluation of multi-junction solarcells by spatially resolved electroluminescencemicroscopy, Nanoscale Research Letters10 (2015) 40.

20. Beneficial effect of alloy disorder on the conversionefficiency of ZnO/ZnxCd1-xSe coaxial nanowiresolar cells, J. Mater. Chem. A 3 (2015) 6360.

21. High Performance 3D Si/Ge Nanorods Array Anode Buffered by TiN/Ti Interlayer for Sodium-Ion Batteries, Adv. Funct. Mater. 25 (2015) 1386-1392.

22. Quantum state engineering with ultra-short-period (AlN)m/(GaN)n superlattices for narrowband deep-ultraviolet detection, Nanoscale 6 (2014) 14733.

23. Two-dimensional Au lattices featuring uniquecarrier transport preference and wide forbiddengap, Nanoscale 6 (2014) 10118.A beyond near-infrared response in awide-bandgap ZnO/ZnSe coaxial nanowiresolar cell by pseudomorphic layers, J. Mater. Chem. A 2 (2014) 14571.

24. High density GaN/AlN quantum dots fordeep UV LED with high quantumefficiency and temperature stability, Scientific Reports 4 (2014)5166.

25. Top- and bottom-emission-enhanced electroluminescence of deep-UV light-emitting diodes induced by localised surface plasmons, Scientific Reports, 4 (2014)4380.

26. High Mg effective incorporation in Al-richAlxGa1-xN by periodic repetition of ultimate V/IIIratio conditions, Nanoscale Research Letters 9(1) (2014) 40.

27. The InN epitaxy via controlling In bilayer, Nanoscale Research Letters 9(1) (2014) 5.

28. Enhanced reversible lithium storage in germanium nano-island coated 3D hexagonal bottle-like Si nanorod arrays, Nanoscale, 6 (3) (2014) 1817.

29. Vacuum Rabi splitting of exciton-polariton emission in an AlN film, Scientific Reports, 3 (2013) 3551.

30. Crystal structure evolution of individual graphene islands during CVD growth on copper foil, Adv. Mater. 25 (2013) 6744.

31. Copper nanowires as fully transparent conductive electrodes, Scientific Reports, 3 (2013) 2323

32. Defect Suppression in AlN Epilayer Using Hierarchical Growth Units, J. Phys. Chem. C 117 (2013) 14158.

33. Optical isotropization of anisotropic wurtzite Al-rich AlGaN via asymmetric modulation with ultrathin (GaN)m/(AlN)n superlattices, Laser and Photonics Rev. 7(4) (2013) 572.

34. Propagation and enhancement of ultraviolet radiation in metal-dielectricnanocables assisted by surface plasmon polaritons, Appl. Phys. Lett. 102 (2013) 171601.

35. Type-II Core/Shell Nanowire Heterostructuresand Their Photovoltaic Applications, Nano-Micro Lett. 4(3) (2012) 135.

36. The band edge emission enhancement by the quadrupole surface plasmon-exciton coupling using direct-contact Ag/ZnO nanospheres, Nanoscale, 5 (2012) 574.

37. Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaNmulti-quantum wells, Scientific Reports 2 (2012) 816.

38. Tuning the dopingtype and level of graphene with different gold configurations, Small 8(20) (2012) 3129.

39. Kinetic behavior of nitrogen penetration into indium double layer improving the smoothness of InN film, J. Appl. Phys. 111 (2012) 113528.

40. Kinetic-dynamic properties of different monomers and two-dimensional homoepitaxy growth on the Zn-polar (0001) ZnO surface, Crystal Growth & Design, 12(6) (2012) 2850.

41. Ohmic contact to n-AlGaN through bonding state transition at TiAl interface, J. Appl. Phys. 111 (2012) 113710.

42. Thermal Conductivity of Isotopically Modified Graphene, Nature Mater., 11(3) (2012) 203.

43. Synthesis and characterization of large-area graphene and graphite films on commercial Cu-Ni alloy foils, Nano Lett. 11(9), (2011), 3519.

44. Structural properties of InN films grown in different conditions by metalorganic vapor phase epitaxy, J. Mat. Res. 26(6) (2011) 775.

45. An all inorganic type II heterojunction solar cell based on a ZnO/ZnSe core/shell nanowire array with nearly full spectral response, J. Mat. Chem. 21(16) (2011) 6020.

46. Raman measurements of thermal transport in suspended monolayer graphene of variable sizes in vacuum and gaseous environments, ACS Nano, 5 (1) (2011) 321.

47. Atomic structure and formation mechanism of identicallysized Au clusters grown on Si (111)-(7×7) surface, J. Chem. Phys. 133 (2010) 124706.

48. Growth kinetic processes of AlN molecules on the Al-polar surface of AlN, J. Phys. Chem. A114 (2010) 9028.

49. Growth and characterization of type-II ZnO/ZnSe core/shell nanowire arrays, J. Mater. Res. 25(7) (2010) 1272.

50. Optical anisotropy of AlN epilayer on sapphire substrate investigated byvariable-angle spectroscopic ellipsometry, Opt. Mater. 32 (2010) 891.

51. Origins and suppressions of parasitic emissions in ultravioletlight-emitting diode structures, J. Mater. Res., 25(6)(2010) 1037.

52. Near-ultraviolet light emitting diodes using strained ultrathin InN/GaN quantum well grown by metal organic vapor phase epitaxy, Appl. Phys. Lett. 96 (2010)101115.

53. Initial stages of Mg adsorption on the Si (111)7X7 surface, J. Appl. Phys. 107 (2) (2010) 023505.

54. Non-contact nanoscale electrical measurements for embedded intrinsic charges by Auger electron spectroscopy, Nanotechnology 21(1) (2010) 015707.

55. Polarization effects on quantum levels in InN/GaN quantum wells, Nanotechnology 20(48) (2009) 485204.

56. Enhancement of p-type conductivity by modifying the internal electric field in Mg- and Si-δ-codoped AlxGa1-xN/AlyGa1-yN superlattices, Appl. Phys. Lett. 95(15) (2009), 151113.

57. Hierarchical lattice structure andformation mechanism of ZnOnano-tetrapods, Nanotechnology 20 (2009) 325709.

58. Band engineering in strained GaN/ultrathin InN/GaN quantum wells, Crystal Growth & Design 9(4) (2009) 1698.

59. Structural and electronic properties of identical-size Zn nanoclusters grown on Si(111)-(7×7) surfaces, J. Chem. Phys. 130 (2009) 024701.

60. Pressure induced wurtzite-to-zinc blende phase transition in ZnO at finite temperature, J. Mater. Res.,23 (2008)3347.

61. Enhancement in middle-ultraviolet emission in a surface-plasmon-assistedcoaxial nanocavity, Appl. Phys. Lett. 93(9) (2008) 091902.

62. Band-edge emission enhancement by longitudinal stress field in GaN, Appl. Phys. Lett. 93(8) (2008) 081908.

63. Au-induced charge redistribution on Si (111)-7x7 surface, Surf. Sci. 602(2) (2008) 638.

64. Quantized level transitions and modification in InGaN/GaN multiplequantum wells, Appl. Phys. Lett. 92(10) (2008) 101929.

65. Phase identification from electronic structures by Augerelectron spectroscopy, J. Mater. Res. 23 (1)(2008) 83.

66. Band engineering in Al0.5Ga0.5N/GaN superlattice by modulating Mg dopant, Appl. Phys. Lett. 91 (15) (2007) 152106.

67. Phase transition of ultrathin AlN interlayer at AlGaN/GaN interface, Appl. Phys. Lett. 90 (12) (2007) 121909.

68. Thickness-dependent phase transition of AlxGa1-xN thin films on strained GaN, J. Phys. Chem. B 110 (2006) 10396.

69. Aligned Zn-Zn2SiO4 core-shell nanocables with homogenously intense ultraviolet emission at 300 nm, J. Phys. Chem. B 109 (2005) 15786.

70. High-spatial-resolution strain measurements by Auger electron spectroscopy in epitaxial-lateral-overgrowth GaN, Appl. Phys. Lett. 86 (2005) 211917.

71. Polarization effect on p-type doping efficiency in Mg- and Si-codoped wurtzite GaN from first-principles calculations, Phys. Rev. B71(3) (2005) 035216.

72. Layer structures under in-plane compressive strains in AlxGa1-xN/AlN interfaces, Phys. Rev. B 68 (7) (2003) 073305.

73. Dislocations around precipitates in AlGaN epilayers, J. Mater. Res. 17 (8) (2002) 2007.

74. Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers, Mater. Sci. & Eng. B 91-92 (2002) 303.

75. Threading dislocations with edge components in GaN epilayer grown on Al2O3 substrates, J. Mater. Res. 16 (9) (2001) 2550.

76. Nanopipes in undoped AlGaN epilayers, J. Crystal Growth 229 (2001) 58.

77. Ultraviolet absorption spectra of amphoteric SnO2 nanocrystallites, Appl. Sur. Sci. 174(2001) 306.

78. Laplace defect spectroscopy for recognition of deep level fine structures, J. Crystal Growth 210 (2000) 247.

79. Lattice images of dislocations with edge components in GaN epilayers grown on Al2O3 substrates, J. Crystal Growth 210 (2000) 157.

80. Precipitates in GaN epilayers grown on sapphire substrates, J. Mater. Res. 13 (1998) 2100.

81. Photoluminescence of undoped bulk InP grown by the liquid-encapsulated vertical Bridgman technique, J. Appl. Phys., 81 (1997) 905.

82. Misfit dislocations and stresses in GaN epilayers, Appl. Phys. Lett. 71 (1997) 2304-2306.

83. Influence of a high vertical magnetic field on Te dopant segregation in InSb grown by the vertical gradient freeze method, J. Crystal Growth 140 (1994) 435.

84. Effect of application of a magnetic field during crystal growth on the photoluminescence characteristics of Ge-doped liquid encapsulated Czochralski grown GaAs, J. Crystal Growth 135 (1994) 623.

85. The identification of Si donor states in AlxGa1-xAs by photoluminescence, J. Appl. Phys. 72 (1992) 1395.

86. Alloy random effect on the characteristics of DX center, Chinese Science Bulletin 34 (1989) 1258.

87. A multistate model for DX centers in AlxGa1-xAs alloy, J. Luminescence 40 & 41 (1988) 365.

授权专利:

1. 国家授权发明专利,分布式布拉格反射与小面积金属接触复合三维电极,专利号201210319019.3(已转让)

2. 国家授权发明专利,多结太阳能电池及各子电池交流电致发光测试方法和装置,专利号200910112669.9(已转让)

3. 国家授权发明专利,矢量强磁场下分子束外延及其原位表征装置,专利号201611236161.6

4. 国家授权发明专利,一种原位测试LED应力的拉曼测试系统及其测试方法,专利号201510288699.0

5. 国家授权发明专利,一种基于二维晶格的紫外单波长MSM光电探测器,专利号201310461747.2

6. 国家授权发明专利,一种纳米结构量子态电注入发光测试方法,专利号201210026594.4

7. 国家授权发明专利,基于LED光源的杉木二步法组培快繁方法,专利号201210230906.3

8. 国家授权发明专利,选择超晶格位置掺杂的p型Ⅲ族氮化物材料的制备方法,专利号200810071176.0

9. 国家授权发明专利,树叶脉络形大功率氮化镓基发光二极管芯片的P、N电极,专利号200610092944.1

10. 国家授权发明专利,纳米级高分辨应力测量方法,专利号200510078721.5

科研基金

1. 国家重点研发计划课题,非平衡条件下AlGaN基量子结构的外延生长和深紫外发光规律;

2. 国家自然科学基金委重点项目,AlGaN基量子结构材料及其大功率深紫外光源;

3. 国家自然科学基金委重点专项,强磁场下半导体/磁性材料异质结构外延及原位自旋相关输运检测系统;

4. 科技部-973计划课题,AlGaN基UV发光材料及其器件应用;

5.科技部-863计划项目,GaN基半导体材料设计与关键外延技术开发;

6. 福建省教育厅,半导体光电材料及其高效转换器件协同创新中心。

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