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李书平
职称 教授 邮箱 lsp@xmu.edu.cn
办公室 物理楼 403 研究方向 半导体光电子材料与器件的理论与实验研究
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LI Shuping

姓名

职称

教授

办公室

物理楼 403

研究领域

半导体光电子材料与器件的理论与实验研究

教育和工作经历

李书平,男,博士、教授。现任厦门大学物理学科与技术学院副院长。一直从事半导体光电子材料与器件的理论与实验研究,近年来主要开展GaN基外延技术研究,完成了波长小于280nm的深紫外LED外延,并实现波长定制可调。主持过福建省自然科学基金,国家高技术研究发展计划(863计划)项目子课题等项目;已在Nanotechnology、Appl. Phys. Lett.等国内外学术刊物上发表论文100多篇,申请多项国家发明专利,获得厦门市科学技术进步三等奖1项。

代表性文章或专著

1. Optical properties of InN studied by spectroscopic ellipsometry, Journal of Semiconductors 37(10), 102002 (2016)

2. Improved characteristics of ultraviolet AlGaN multiplequantum-well laser diodes with step-graded quantum barriers close to waveguide layers, Superlattices and Microstructures 97, 1-7 (2016)

3. Enhanced magneto-optical effects in composite coaxial nanowires embedded with Ag nanoparticles, Scientific Reports, 6, 29170 (2016)

4. Optimized design of multi-shell ZnO/TiO2/ZnSe nanowires decorated with Ag nanoparticles for photocatalytic applications, RSC Adv., 6, 71800–71806 (2016)

5. Family ofCu@metalnanowires network for transparent electrodes on n-AlGaN, Phys. Status Solidi A 213(5) , 1209–1212 (2016)

6. Performance enhancement of AlGaN deep-ultraviolet lightemitting diodes with varied superlattice barrier electron blocking layer, Appl. Phys. A 122, 527 (2016)

7. Modified pulse growth and misfit strain release of an AlN heteroepilayer with a Mg–Si codoping pair by MOCVD, J. Phys. D: Appl. Phys. 49, 115110 (2016)

8. Size effect on morphology and optical properties of branched ZnO/Si nanowire arrays, Physics Letters A 380, 1044–1048 (2016)

9. Improved p-type conductivity in Alrich AlGaN using multidimensional Mg-doped superlattices, Scientific Reports 6, 21897 (2016)

10. Direct Observation of the Biaxial Stress Effect on Efficiency Droop in GaN-based Light-emitting Diode under Electrical Injection, SCIENTIFIC REPORTS 5:17227 (2015)

11. Advantages of AlGaN-based deep ultraviolet light-emitting diodes with a superlattice electron blocking layer, SUPERLATTICES AND MICROSTRUCTURES 85:59-66(2015)

12. Ultrawide photoresponse in ZnO/ZnSe coaxial nanowires with a threshold of 0.8 eV, INTERNATIONAL JOURNAL OF HYDROGEN ENERGY 40(34):10788-10794(2015)

13. Electro-optic Coefficient Enhancement of AlxGa1-xN via Multiple Field Modulations, ACS APPLIED MATERIALS & INTERFACES 7(32):17707-17712 (2015)

14. Facile synthesis of composition-tuned ZnO/ZnxCd1-xSe nanowires for photovoltaic applications, Nanoscale Research Letters 10:181 (2015)

15. Performance Improvements for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With the p-Type and Thickened Last Quantum Barrier, IEEE PHOTONICS JOURNAL 7(1): 1400110 (2015)

16. Beneficial effect of alloy disorder on the conversion efficiency of ZnO/ZnxCd1-xSe coaxial nanowire solar cells, JOURNAL OF MATERIALS CHEMISTRY A 3(12), 6360-6365 (2015)

17. Kinetic process of nitridation on the ?-sapphire surface, Journal of Semiconductors 35(11), 116004 (2014)

18. Quantum state engineering with ultra-shortperiod (AlN)m/(GaN)n superlattices for narrowband deep-ultraviolet detection, Nanoscale, 6, 14733 (2014)

19. A beyond near-infrared response in a wide-bandgap ZnO/ZnSe coaxial nanowire solar cell by pseudomorphic layers, J. Mater. Chem. A, 2, 14571–14576 (2014)

20. High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability, SCIENTIFIC REPORTS 4, 5166 (2014)

21. Controllable synthesis of branched ZnO/Si nanowire arrays with hierarchical structure, Nanoscale Research Letters 9, 328 (2014)

22. Top- and bottom-emission-enhanced electroluminescence of deep-UV light-emitting diodes induced by localised surface plasmons, SCIENTIFIC REPORTS 4, 4380 (2014)

23. Band engineering of GaN/AlN quantum wells by Si dopants, JOURNAL OF APPLIED PHYSICS 115, 124305 (2014)

24. Multipole plasmon resonances in self-assembled metal hollow-nanospheres, Nanoscale, 6, 3934–3940 (2014)

25. High Mg effective incorporation in Al-rich AlxGa1 ? xN by periodic repetition of ultimate V/III ratio conditions, Nanoscale Research Letters 9(40) 1-7 (2014)

26. Vacuum Rabi Splitting of Exciton-Polariton Emission in an AlN Film, SCIENTIFIC REPORTS,3, 3551 (2013)

27. Copper Nanowires as Fully Transparent Conductive Electrodes, SCIENTIFIC REPORTS,3,2323 (2013)

28. Defect Suppression in AlN Epilayer Using Hierarchical Growth Units, J. Phys. Chem. C,117, 14158-14164(2013)

29. Optical isotropization of anisotropic wurtzite Al-rich AlGaN via asymmetric modulation with ultrathin (GaN)m/(AlN)n superlattices, LASER & PHOTONICS REVIEWS,7(4),572-579 (2013)

30. Structural anomalies induced by the metal deposition methods in 2D silver nanoparticle arrays prepared by nanosphere lithography, Thin Solid Films 536,136–141 (2013)

31. Control of two-dimensional growth of AlN and high Al-content AlGaN-based MQWs for deep-UV LEDs, AIP ADVANCES 3, 052103 (2013)

32. Type-II Core/Shell Nanowire Heterostructures and Their Photovoltaic Applications, Nano-Micro Lett. 4 (3), 135-141 (2012)

33. Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wells, SCIENTIFIC REPORTS(2):816 (2012)

34. Band engineering of type-II ZnO/ZnSe heterostructures for solar cell applications, JOURNAL OF MATERIALS RESEARCH 27( 4), 730-733 (2012)

35. ZnO/ZnSe type II core-shell nanowire array solar cell, SOLAR ENERGY MATERIALS AND SOLAR CELLS, 102, 15-18 (2012)

36. Kinetic behavior of nitrogen penetration into indium double layer improving the smoothness of InN film, JOURNAL OF APPLIED PHYSICS, 111(11), 113528(2012)

37. Ohmic contact to n-AlGaN through bonding state transition at TiAl interface, JOURNAL OF APPLIED PHYSICS, 111(11), 113710(2012)

38. X-ray reflectivity and atomic force microscopy studies of MOCVD grown AI_xGa_(1-x)N/GaN superlattice structures,半导体学报,32(4),043006 (2011)

39. Structural properties of InN films grown in different conditions by metalorganic vapor phase epitaxy, J. Mat. Res. 26(6) 775-780(2011)

40. An all-inorganic type-II heterojunction array with nearly full solar spectral response based on ZnO/ZnSe core/shell nanowires, J. Mat. Chem. 21(16) 6020-6026 (2011)

41. Origins and suppressions of parasitic emissions in ultraviolet light-emitting diode structures, J. Mater. Res., 25(6) 1037-1040 (2010)

42. Growth Kinetic Processes of AlN Molecules on the Al-Polar Surface of AlN, J. Phys. Chem. A 114, 9028–9033(2010)

43. Sensitivity enhancement of longitudinally driven giant magnetoimpedance magnetic sensor using magnetoelastic resonance, Sensors and Actuators A 161 62-65(2010)

44. Optical anisotropy of AlN epilayer on sapphire substrate investigated by variable-angle spectroscopic ellipsometry, Optical Materials 32 891–895(2010)

45. Growth and characterization of type-II ZnO/ZnSe core/shell nanowire arrays, J. Mater. Res. 25(7) 1272-1277 (2010)

46. Density-controlled growth of well-aligned ZnO nanowires using chemical vapor deposition, Science China (Technological Sciences), 53(3), 766-768 (2010)

47. Magnetoelastic resonance enhancement of longitudinally driven giant magnetoimpedance effect in FeCuNbSiB ribbons, PHYSICA B-CONDENSED MATTER, 405(1), 327-330 (2010)

48. Near-ultraviolet light emitting diodes using strained ultrathin InN/GaN quantum well grown by metal organic vapor phase epitaxy, APPLIED PHYSICS LETTERS 96, 101115 (2010)

科研基金

1. 国家重点研发计划:固态紫外光源量子应变体系结构设计与机理研究(2016.07-2021.06)

2. 国家“863”计划项目子课题:高铝组分氮化物材料制备技术研究(2014.01-2016.12)

3. 厦门市科技计划项目:新型半导体低维结构材料器件设计与制备研究(2011.08-2013.07)

4. 国家“863”计划项目子课题:深紫外LED外延生长及应用技术研究(2011.01-2013.12)

5. 国家自然科学基金重大研究计划培育项目:全同量子点晶格构筑及其量子态间耦合表征(2010.01-2012.12)

6. 厦门市科技计划项目:高效多结太阳能电池特性研究(2009.08-2011.08)

7. 国家自然科学基金重点专项:原位半导体纳米结构综合测试系统研制(2009.01-2011.12)

8. 福建省科技计划重点项目:GaN 基紫外LED 芯片制备(2007.05-2009.06)

9. 厦门市科技计划项目:稳定波长的高性能GaN基LED芯片(2006.1-2007.12)

10.国家“863”计划项目:GaN基半导体材料设计与关键外延技术开发(2006.10-2008.09)

任教课程

本科生课程:热力学统计物理、半导体物理

研究生课程:非线性材料设计

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