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  • Cai Jiafa

    Senior engineer

    jfcai@xmu.edu.cn

    物理楼 555

    半导体材料与器件的光电性质测试与研究;光电探测器的应用开发

  • Chen Hangyang

    Engineer

    基于III族氮化物半导体材料的大功率LED、深紫外LED和日盲探测器。

  • Chen Xiaping

    Senior engineer

    chenxp@xmu.edu.cn

    半导体器件物理与制备工艺 宽带隙半导体材料与光电器件研究

  • Fu Gengming

    Engineer

    fugma@china.com.cn

    半导体器件

  • Guo Shengshi

    Senior Experimenter

    xmguo2002@xmu.edu.cn

    科学楼208室

    半导体工艺;半导体材料测试

  • Hong Rongdun

    Senior engineer

    rdhong@xmu.edu.cn

    物理楼 311

  • Liu Dayi

    Engineer

    day@xmu.edu.cn

    Ⅲ族氮化物半导体材料外延生长以及器件制作领域的研究工作。

  • lindingqu

    Engineer

    lindq@xmu.edu.cn

    半导体材料测试

  • Li Heng

    Senior engineer

    liheng3000@xmu.edu.cn

    碳纳米管,拉曼光谱

  • LI Jinchai

    Professorate senior engineer

    jinchaili@xmu.edu.cn

    Room 422

    Epitaxy of III-nitrides materials by MOVPE. Process and characterization of optoelectronic devices, such as blue and ultraviolet LEDs, solar cells, detectors etc. Computational simulation research of III-nitride materials.

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