1．Wei Huang, Guo-Ping Ru, C. Detavernier, R. L. Van Meirhaeghe, Yu-Long Jiang, Xin-Ping Qu, Bing-Zong Li, Yttrium silicide formation and its contact properties on Si(100). Microelectronics Engineering, 85, 131 (2008).
2．Wei Huang, Guo-Ping Ru, C. Detavernier, R. L. Van Meirhaeghe, Yu-Long Jiang, Xin-Ping Qu, Bing-Zong Li, Effect of Pt addition on the stress of NiSi film formed on Si(100), Chinese Journal of Semiconductors, 28, 635 (2007).
3．W. Huang, G.P. Ru, Y.L. Jiang, X.P. Qu, B.Z. Li, R. Liu, Improvement of Er-silicide formation on Si(100) by W capping. Thin Solid Films, 516, 4252 (2008).
4．W. Huang, G.P. Ru, X.P. Qu, Y.L. Jiang, B.Z. Li, Erbium silicide formation and its contact properties on Si(100). Journal of Vacuum Science and Technology B, 26, 164 (2008).
5．W. Huang, Y.L. Min, G.P. Ru, X.P. Qu, Y.L. Jiang, B.Z. Li, Effect of erbium interlayer on nickel silicide formation on Si(100). Applied Surface Science, 254, 2120 (2008).
6．Yu-Long Jiang, Guo-Ping Ru, Wei Huang, Xin-Ping Qu, Bing-Zong Li, Aditya Agarwal, Gary Cai, John Poate, Christophe Detavernier, R L Van Meirhaeghe, Electrical characterization of NiSi/Si interfaces formed by a single and a two-step rapid thermal silicidation, Semiconductor Science and Technology. 20, 716 (2005).