Li Shuping, Male, Doctor of Science, Professor. He is one of the vice presidents of college of physical science and technology, Xiamen University. He has been engaged in theoretical and experimental study of semiconductor optoelectronic materials and devices. In recent years, he mainly studies the GaN epitaxial technology, had completed the wavelength less than 280nm deep UVLED epitaxy and realized wavelength tunable. He presided the Fujian Natural Science Foundation, subproject of the National High Technology Research and Development Program (863 Program) and other projects. He had published more than 50 papers on Nanotechnology, Appl. Phys. Lett. And other domestic and foreign academic journals, had applied for a number of national invention patents, had won one award of Xiamen Municipal Science and Technology Progress.

1.Structural properties of InN films grown in different conditions by metalorganic vapor phase epitaxy, J. Mat. Res. 26(6) 775-780 (2011)
2.An all-inorganic type-II heterojunction array with nearly full solar spectral response based on ZnO/ZnSe core/shell nanowires, J. Mat. Chem. 21(16) 6020-6026 (2011)
3.Origins and suppressions of parasitic emissions in ultraviolet light-emitting diode structures, J. Mater. Res., 25(6) 1037-1040 (2010)
4.Growth Kinetic Processes of AlN Molecules on the Al-Polar Surface of AlN, J. Phys. Chem. A 114, 9028–9033(2010)
5.Sensitivity enhancement of longitudinally driven giant magnetoimpedance magnetic sensor using magnetoelastic resonance, Sensors and Actuators A 161 62-65(2010)
6.Optical anisotropy of AlN epilayer on sapphire substrate investigated by variable-angle spectroscopic ellipsometry, Optical Materials 32 891–895(2010)
7.Growth and characterization of type-II ZnO/ZnSe core/shell nanowire arrays, J. Mater. Res. 25(7) 1272-1277 (2010)
8.Density-controlled growth of well-aligned ZnO nanowires using chemical vapor deposition, Science China (Technological Sciences), 53(3), 766-768 (2010)
9.Magnetoelastic resonance enhancement of longitudinally driven giant magnetoimpedance effect in FeCuNbSiB ribbons, PHYSICA B-CONDENSED MATTER, 405(1), 327-330 (2010)
10.Near-ultraviolet light emitting diodes using strained ultrathin InN/GaN quantum well grown by metal organic vapor phase epitaxy, APPLIED PHYSICS LETTERS 96, 101115 (2010)
11.AlGaN-Based Deep-Ultraviolet Light Emitting Diodes Fabricated on AlN/sapphire Template, CHIN. PHYS. LETT. 26( 11) 117801 (2009)
12.Polarization effects on quantum levels in InN/GaN quantum wells. Nanotechnology 20 485204 (2009)
13.Enhancement of p-type conductivity by modifying the internal electric field in Mg- and Si-δ-codoped AlxGa1-xN/AlyGa1-yN superlattices, Appl. Phys. Lett. 93 151113 (2009)
14.Electronic Structures of InN/GaN Quantum Dots, J. Nanosci. & Nanotech. 9(2) 1226-1228 (2009)
15.Band engineering in strained GaN/ultrathin InN/GaN quantum wells, Crystal Growth & Design 9(4) 1698-1701 (2009)
16.Design and epitaxy of structural III-nitrides, J. Crystal Growth 311478–481 (2009)
17.Kinetic Monte Carlo simulations of Au clusters on Si(111)-7 X 7 surface, J. Nanopart. Res. 11(4) 895-901(2009)
18.Initial process effects on the surface morphology and structural property of the AlN epilayers, J Mater Sci: Mater Electron 19 S215–S218(2008)
19.GaN on Si-rich SiNx-coated sapphire at different growth stages:The surface morphologies and optical properties,Thin Solid Films, 516:6344–6352 (2008)
20.AlGaN-based solar-blind Schottky photodetectors fabricated on AlN/sapphire template, CHINESE PHYSICS LETTERS. 25(1): 258-261(2008)
21.Interaction between the intrinsic second- and third-order optical fields in an Al0.53Ga0.47N/GaN heterostructure, APPLIED PHYSICS LETTERS. 92(16): 161112 (2008)
22.Quantized level transitions and modification in InGaN/GaN multiple quantum wells, Appl. Phys. Lett. 92 (10) 101929 (2008)
23.The adsorption of Au on Si(111)-7x7 surface: A first-principles study, SURFACE REVIEW AND LETTERS, 14(4) 657-660 (2007)
24.Enhanced Pockels effect in GaN/AlxGa1-xN superlattice measured by polarization-maintaining fiber Mach-Zehnder interferometer, APPLIED PHYSICS LETTERS, 91(3): 031103 (2007)
25.Defect influence on luminescence efficiency of GaN-based LEDs, Materials Science in Semiconductor Processing, 9,371-374(2006)
26.Si adsorption on Cu(110) surface from ab initio calculation, Surface Science 553, 126–132(2004)