1. Cheng LI, Hongkai Lai, Songyan Chen, T. Suemasu, F. Hasegawa,Temperature dependence of electroluminescence from silicon p-I-n light-emitting diodes, J. Appl. Phys. Vol.100,023506(2006)
2. Cheng LI, Hongkai Lai, Songyan Chen, T. Suemasu, F. Hasegawa, Improvement of luminescence from Beta-FeSi2 particles embedded in silicon with high temperature silicon buffer layer, J. Crys. Growth, 90(1), 178, 2006.
3. Cheng LI, T. Suemasu, F. Hasegawa, Temperature dependence of electroluminesecence from Si-based light emitting diodes with Beta-FeSi2 particles active regions, J. Luminescence, 118, 330, 2006.
4. Cheng LI, T. Suemasu and F. Hasegawa, Room-Temperature Electroluminescence of a Si-Based p-i-n Diode with Beta-FeSi(2),J. Appl. Phys. Vol97, (4)2005.
5. Cheng Li, Y.Ozawa, T.Suemasu and F.Hasegawa,Thermal Enhancement of 1.6 m Electroluminescence from a Si-Based Light-Emiiting Diode with -FeSi2 Active Region,Jpn. J. Appl. Phys. Vol. 43, No. 11B (2004)L1492.
6. Cheng LI, T. Ohtsuka, Y.Ozawa, T. Suemasu and F. Hasegawa, “Influence of boron-doped Si cap layer on the photoluminescence of Beta-FeSi2 particles embedded in Si matrix”, J. Appl. Phys. 94(3), 1518(2003)
7. Cheng Li, C.J.Huang, B. Cheng, Y. Zhuo, L. Luo, Jinzhong Yu, Qiming Wang, “SiGe/Si resonant-cavity-enhanced photodetectors for 1.3um operation fabricated using wafer bonding techniques”, J. Appl. Phys. 92(4), August, 2002.
8. Cheng Li, Qinqing Yang, Jinzhong Yu, Qiming Wang, “Low-cost, high-refelectivity Si-on-reflector for optoelectronic devices application”, Chinese J. of semiconductors.22(3), 2001.
9. Cheng Li, Qinqing Yang, Hongjie Wang, Jinzhong Yu, Qiming Wang, “Back-incident SiGe-Si multiple quantum-well resonant-cavity- enhanced photodetectors for 1.3um operation”, IEEE Photonics Technology Letters, 12(10), p. 1273, 2000.
10. Cheng Li, Qinqing Yang, Hongjie Wang, Jinzhong Yu, Qiming Wang, Yongkang Li, Junming Zhou, Chenglu Lin,  Si1-xGex/Si Resonant- Cavity-Enhanced photodetectors with a silicon-on-oxide reflector operating near 1.3um , Appl. Phys. Lett., 77(2), p.157,July 10, 2000.
11. Cheng Li, Qinqing Yang, Hongjie Wang,Buweng Cheng, Jinzhong Yu, Qiming Wang, Characteristics of Circular Waveguide photodetectors using SiGe/Si multiple quantum wells, Optical Material, 14(3), pp267~269, 2000.
12. Cheng Li, Qinqing Yang, Hongjie Wang, Hongzheng Wei, Jinzhong Yu, Qiming Wang, Observation of quantum confined Stark shifts in SiGe/Si type-I multiple quantum wells, J. Appl. Phys., 87(11), p.8195, June. 1, 2000.
13. Cheng Li, Qinqing Yang, Yonghai Cheng, Hongjie Wang, Jizheng Wang, Jinzhong Yu, Qiming Wang,A study of SiGe/Si quantum well intermixing by photocurrent spectroscopy, Thin Solid Films，359, pp236~238, 2000.
14. cheng Li, Qinqing Yang, Hongjie Wang, Jialian zhu, Liping Luo, Jinzhong Yu, Qiming Wang, “Normal incident SiGe/Si MQW photodetectors”, Chinese J. of semiconductors, 21(5), 2000. (In Chinese)
15. Cheng LI, Qinqing Yang, Hongjie Wang, Liping Luo, Jialian zhu, Jinzhong yu, Qiming Wang, “Si-based Bragg reflector for RCE photodtectors”, Chinese J. of Semiconductors, 21(5), 2000. (In chiense)
16. T.Suemasu, Cheng Li, T.Ohtsuka, Y.Ozawa and F.Hasegawa, Epitaxial growth of semiconducting -FeSi2 films on Si(001) substrates and the application to light-emitting devices,Thin Solid Films, Vol. 461 (2004) 209-218.
17. M. Takauji, C. Li, T. Suemasu and F. Hasegawa,Fabrication of p-Si/beta-FeSi2/n-Si Double-Heterostructure Light-Emitting Diode by Molecular Beam Epitaxy,Jpn. J. Appl. Phys. Vol. 44, No. 4B (2005).
18. T. Sunohara, C. Li, Y. Ozawa, T. Suemasu and F. Hasegawa,Growth and Characterization of Si-Based Light-Emitting Diode with FeSi2-Particles/Si Multilayered Active Region by Molecular Beam Epitaxy,Jpn. J. Appl. Phys. Vol. 44, No. 4B (2005).
19. Y.Ozawa, T.Ohtsuka, C.Li, T.Suemasu and F. Hasegawa “Influence of '-FeSi(2) Particle Size and Si Growth Rate on 1.5 5m Photoluminesce” J. Appl. Phys. May 15, 2004.