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李金钗
职称 教授级高级工程师 邮箱 jinchaili@xmu.edu.cn
办公室 物理楼422 研究方向 III族氮化物半导体材料外延及光电器件制备
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姓名:李金钗

职称:教授级高级工程师

办公室:物理大楼422

Email:jinchaili@xmu.edu.cn

研究领域:III族氮化物半导体材料外延及光电器件制备

教育和工作经历

1998年9月~2002年 7月 厦门大学物理系 物理与电子信息类 攻读学士学位

2002年9月~2008年12月 厦门大学物理系 凝聚态物理 攻读博士学位

2009年8月~2010年12月 台湾交通大学光电工程系 博士后研究

2011年2月~2017年7月 厦门大学物理系 高级工程师

2017年8月至今 厦门大学物理系 教授级高级工程师

代表性文章或专著

[1]Z. B. Zhong, S. Q. Lu,J. C. Li,*W. Lin, K. Huang, S. P. Li, D. J. Cai, and J. Y. Kang*, “Design and fabrication of high power InGaN blue laser diode over 8 W”, Optics & Laser Technology 139, 106985, 2021.

[2]Z. B. Zhong, X. L. Zheng,J. C. Li,*J. J. Zheng, Y. S. Zang, W. Lin, and J. Y. Kang*, “Fabrication of High-Voltage Flip Chip Deep Ultraviolet Light-Emitting Diodes Using an Inclined Sidewalls Structure”, Phys. Status Solidi A, 216, 1900059, 2019.

[3]Z. Y. Luo, S. Q. Lu,J. C. Li,*C. J. Wang, H. Y. Chen, D. Y. Liu, W. Lin, X. Yang, and J. Y. Kang, “Modification of strain and optical polarization property in AlGaN multiple quantum wells by introducing ultrathin AlN layer”, AIP Advances, 9: 055004, 2019.

[4]J. J. Zheng,J. C. Li*,Z. B. Zhong,W. Lin, L. Chen, K. Y. Li, X. H. Wang, C. L. Chou, S. Q. Li, J. Y. Kang*, “Effect of electrical injection-induced stress on interband transitions in high Al content AlGaN MQWs”, RSC Advances, 7: 55157~55162, 2017.

[5]J. Zhou,J. C. Li*, S. Q. Lu, J. Y. Kang*, and W. Lin, “Characteristics of InN epilayers grown with H2-assistance”, AIP Advances, 7: 115207, 2017.

[6]J. C. Li,*, G. L. Ji, W. H. Yang, P. Jin, H. Y. Chen, W. Lin, S. P. Li, and J . Y. Kang, “Emission Mechanism of High Al-content AlGaN Multiple Quantum Wells”. Chinese Journal of Luminescence. 37: 513, 2016.

[7]W. H. Yang,J. C. Li,*Y. Zhang, P. K. Huang, T. C. Lu, H. C. Kuo, S. P. Li, X. Yang, H. Y. Chen, D. Y. Liu, J . Y. Kang*, “High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability”, Scientific reports,4, 5166, 2014.

[8]K. Huang*, N. Gao, C. Z. Wang, X. Chen,J. C. Li,*S. P. Li, X. Yang, J. Y. Kang, “Top- and bottom-emission-enhanced electroluminescence of deep-UV light-emitting diodes induced by localized surface plasmon”, Scientific reports,4, 4380, 2014.

[9]W. H. Yang,J. C. Li,*W. Lin, S. P. Li, H. Y. Chen, D. Y. Liu, Xu. Yang, and J. Y. Kang. “Control of two-dimensional growth of AlN and high Al-content AlGaN-based MQWs for deep-UV LEDs”, AIP Advances.,3, 052013, 2013.

[10]C. H. Wang, S. P. Chang, P. H. Ku,J. C. Li,*Y. P. Lan, C. C. Lin, H. C. Yang, H. C. Kuo*, T. C. Lu, S. C. Wang, and C. Y. Chang, “Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers”, Applied Physics Letters, 97,171106,2011.

[11]C. H. Wang, S. P. Chang, H. W. Wang,J. C. Li,*W. T. Chang, Y. S. Lu, Z. Y. Li, H. C. Kuo*, T. C. Lu, and S. C. Wang, “Efficiency droop alleviation in InGaN/GaN light-emitting diodes by graded-thickness multiple quantum wells”, Applied Physics Letters, 97, 181101, November, 2010.

[12]C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang,J. C. Li,*Z. Y. Li, H. C. Yang, H. C. Kuo*, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer”, Applied Physics Letters, 97, 261103, December, 2010.

[13]S. P. Chang, C. H. Wang,J. C. Li,*Y. S. Lu, Z. Y. Li, H. C. Yang, H. C. Kuo*, T. C. Lu, and S. C. Wang, “Characteristics of efficiency droop in GaN-based light emitting diodes with an insertion layer between the multiple quantum wells and n-GaN layer”, Applied Physics Letters, 97, 251114, December, 2010.

[14]J. C. Li,T. C. Lu*, H. M. Huang, W. W. Chan, H. C. Kuo, and S. C. Wang, “Characteristics of emission polarization in a-plane nanorods embedded with InGaN/GaN MQWs”, Journal of Applied Physics, 108, 063508, September, 2010.

[15]J. C. Li,W. H. Yang, S. P. Li, H. Y. Chen, D. Y. Liu, and J. Y. Kang*, “Enhancement of p-type conductivity by modifying the internal electric field in Mg- and Si-d-codoped AlxGa1-xN/AlyGa1-yN superlattices”, Applied Physics Letters, 95, 151113-1-151113-3, October, 2009.

[16]J. C. Li,W. Lin, W. H. Yang, W. Z. Cai, Q. F. Pan, X. J. Lin, S. P. Li, H. Y. Chen, D. Y. Liu, J. F. Cai, X. Yu, and J. Y. Kang*, “Design and epitaxy of structural III-nitrides”, Journal of Crystal Growth, 311(3), 478-481, January, 2009.

[17]J. C. Li,S. P. Li, and J. Y. Kang*, “Quantized level transitions and modification in InGaN/GaN multiple quantum wells”, Applied Physics Letters, 92 (10), 101929-1-101929-3, March, 2008.

[18]J. C. Li,and J. Y. Kang*, “Band engineering in Al0.5Ga0.5N/GaN superlattice by modulating Mg dopant”, Applied Physics Letters, 91 (15), 152106-1-152106-3, October, 2007.

[19]J. C. Li,and J. Y. Kang*, “Polarization effect on p-type doping efficiency in Mg-Si codoped wurtzite GaN from the first-principles calculations”, Physical Review B, 71 (3), 035216-1-035216-4, January, 2005.

[20]J. C. Li,W. Lin, W. H. Yang, W. Z. Cai, Q. F. Pan, X. J. Lin, S. P. Li, H. Y. Chen, D. Y. Liu, J. F. Cai, X. Yu, and J. Y. Kang*, “Design and epitaxy of structural III-nitrides”, Journal of Crystal Growth, 311(3), 478-481, January, 2009.

[21]J. C. Li,and J. Y. Kang*, “Codoped configuration effect on p-type doping efficiency in GaN”, in the proceedings of 2004. 9. SIMC-XIII, IEEE press, 57-60, September, 2005.

科研成果

[1]国家自然科学基金面上项目,61874090,AlGaN基量子结构和器件中高电流密度诱导效应的调控,2019.01-2022.12,66万元,在研,主持

[2]国家重点研发计划项目子课题,2018YFB0406702,基于微纳结构材料的单芯片全光谱LED技术研究,2018.07-2021.06,46.5万元,在研,主持

[3]国家重点研发计划项目,2016YFB0400101,非平衡条件下AlGaN基量子结构的外延生长和深紫外发光规律,2016/06-2020/5,300万元,已结题,参加

[4]国家自然科学基金海峡两岸联合基金项目,U1405253,AlGaN基量子结构材料及其大功率深紫外光源,2015/01-2018/12,260万元,已结题,参加

[5]国家973计划项目,2012CB619301,AlGaN基UV发光材料及其器件应用,2012/01-2016/09,523万元,已结题,参加

[6]国家自然科学基金青年基金项目,11204254,高Al组分AlGaN应变量子结构与特性研究,2013/01-2015/12,30万元,已结题,主持

任教课程

《工程伦理》