【3月8日讲座】Advances in SiC Power Devices in China

主 讲 人:张峰 教授

研究方向:SiC功率器件和紫外探测器

时 间:2019年3月8日(周14:30  

地 点:行政楼A306(软件学院办公楼)

张峰,厦门大学物理科学与技术学院教授,主要从事SiC紫外光电探测器研究。目前为中国科学院青年创新促进会成员,中国ALD会议秘书长,IEEE会员,美国材料研究学会(MRS)会员和美国真空学会(AVS)会员。负责国家“973”计划、“863”计划、国家自然科学基金、国家科学挑战专题等项目。国际权威SCI刊物上发表文章50余篇,申请专利30余项。

Abstract:As a representative of wide-band-gap semiconductor, SiC is one of the fastest-developing material in power field. If SiC power devices are used for power transmission in China, the electrical energy of installed capacity of double Three Gorges hydroelectric power station can be saved. SiC devices are wide band gap compound semiconductor devices with advantages of high frequency, low switching loss and large current density, which is one of the most significant semiconductor devices in converters of high-voltage direct-current transmission. The application of SiC based power devices is generally acknowledged to be a revolution in power field and recognized as a strategic industry with great increasing potential, which is paid highly attentions by governments and industries in the world. national original innovation capacity on SiC power devices to solve these scientific issues thoroughly....