Research
Research

Location: Home > Research > Research Areas > Semiconductor physics > Content

Cai Duanjun

Professor

dcai@xmu.edu.cn

R326, Jiageng Building #4, Xiamen u

website:

Research Areas(1)3D nanostructured semiconductor materials (GaN and ZnO nanorod array) and advanced optoelectronic devices (2)Superfine metals nanowires (pure and core-shell Cu nanosilks) and transparent conductive films (3)2D semiconductor films (h-BN atomic layers) and related optoelectronic devices (4)Nitride semiconductors and Deep-UV LEDs (5)Advanced nano-scopic characterization techniques (6)Bioluminescent proteins (firefly emitter) (7)First-principles calculations for multifunctional materials

Education&Work Experience
1996-2000 B. Sc. in Physics, Department of Physics, Xiamen University, China
2000-2006 Ph. D. in Condensed Matter Physics, Department of Physics, School of Physics and Mechanical & Electrical Engineering, Xiamen University, China
Thesis : Strain related effects of GaN based semiconductor heterostructures    Supervisor: Professor Junyong Kang
2006-2008  Postdoctoral fellow, Department of Physics, National Taiwan University, Taipei, Taiwan
2008-2010 Postdoctoral Researcher, Department of Physics, University of Coimbra, Coimbra, Portugal & Laboratoire de Physique de la Matière Condensée et Nanostructures, Université Lyon I, Villeurbanne Cedex, France.
2011-2015 Associate Professor, School of Physics and Mechanical & Electrical Engineering, Xiamen University, China
2013- Adjunct Associate Professor, Institute of Photonics and Optoelectronics, National Taiwan University, Taiwan
2015-  Professor, College of Physical Science and Technology, Xiamen University, China
2016-   Visiting scholar, Department of Chemistry, Duke University, U.S.A.
Publications
T. C. Zheng, W. Lin, R. Liu, D. J. Cai, J. C. Li, S. P. Li and J. Y. Kang*, “Improved p-type conductivity in Al-rich AlGaN using multidimensional Mg-doped superlattices”, Scientific Reports (2016, in press).
H. C. Wang, H. M. Xu, C. P. Wu, A. M. Soomro, H. Z. Guo, T. B. Wei, S. P. Li, J. Y. Kang, and D. J. Cai*, “Family of Cu@metal nanowires network for transparent electrodes on n-AlGaN”, Physica Status Solidi B (2016, in press).
C. P. Wu, A. M. Soomro, F. P. Sun, H. C. Wang, C. Liu, X. D. Yang, J. Y. Kang, and D. J. Cai*, “Seven-inch large-size synthesis of monolayer hexagonal BN film by low pressure CVD”, Physica Status Solidi B (2016, in press).
H. M. Xu, H. C. Wang, C. P. Wu, N. Lin, A. M. Soomro, H. Z. Guo, C. Liu, X. D. Yang, Y. P. Wu, D. J. Cai*, and J. Y. Kang, "Direct synthesis of graphene 3D-coated Cu nanosilks network for antioxidant transparent conducting electrode", Nanoscale 7, 10613–10621 (2015).
X. H. Chen, H. M. Xu, N. Lin, F. C. Xu , H. Y. Chen, D. J. Cai* and J. Y. Kang, "Ideal square quantum wells achieved in AlGaN/GaN superlattices using ultrathin blocking-compensation pair", Applied Physics Letters 106,111604 (2015).
D. J. Cai*, N. Lin, H. M. Xu, C. H. Liao and C. C. Yang, “Extraordinary N atom tunneling in formation of InN shell layer on GaN nanorod m-plane sidewall", Nanotechnology 25, 495705 (2014).
X. L. Zhuo, J. C. Ni, J. C. Li, W. Lin, D. J. Cai, S. P. Li, and J. Y. Kang, “Band engineering of GaN/AlN quantum wells by Si dopants”, Journal of Applied Physics 115, 124305 (2014).
T. C. Zheng, W. Lin, D. J. Cai, W. H. Yang, W. Jiang, H. Y. Chen, J. H. Li, S. P. Li and J. Y. Kang, "High Mg effective incorporation in Al-rich AlxGa1 − xN by periodic repetition of ultimate V/III ratio conditions", Nanoscale Research Letters 9, 40 (2014).
J. Zhou, Q. C. Huang, J. C. Li, D. J. Cai*, and J. Y. Kang, “The InN epitaxy via controlling In bilayer”, Nanoscale Research Letters 9, 5 (2014).
N. Lin, J. J. Wu, H. M. Xu, N. L. Liu, T. C. Zheng, W. Lin, C. Liu and D. J. Cai*, “In situ self-release of thick GaN wafer from sapphire substrate via graded strain field engineering”, Applied Physics Letters 104, 012110 (2014).
H. Z. Guo, N. Lin, Y. Z. Chen, Z. W. Wang, Q. S. Xie, T. C. Zheng, N. Gao, S. P. Li, J. Y. Kang, D. J. Cai* and D. L. Peng, “Copper Nanowires as Fully Transparent Conductive Electrodes”, Scientific Reports 3, 2323 (2013).
D. J. Cai*, M. A. L. Marques, and F. Nogueira, “Full Color Modulation of Firefly Luciferase through Engineering with Unified Stark Effect”. Journal of Physical Chemistry B 117 , 13725–13730 (2013).
D. J. Cai­*, X. H. Chen­, H. M. Xu­, N. Lin­, F. C. Xu­, and H. Y. Chen, “Abruptness Improvement of the Interfaces of AlGaN/GaN Superlattices by Cancelling Asymmetric Diffusion”,Japanese Journal of Applied Physics 52, 08JB30 (2013).
W. Lin, W. Jiang, N. Gao, D. J. Cai*, S. P. Li, and J. Y. Kang, “Optical isotropization of anisotropic wurtzite Al-rich AlGaN via asymmetric modulation with ultrathin (GaN)m/(AlN)n superlattices”, Laser & Photonics Reviews 7, 572 (2013).
X. H. Chen, N. Lin, D. J. Cai*, Y. Zhang, H. Y. Chen, and J. Y. Kang, “Symmetrically abrupt GaN/AlGaN superlattices by alternative interface–interruption scheme”, Journal of Materials Research 28, 716 (2013).
Q. C. Huang, S. P. Li, D. J. Cai*, and J. Y. Kang, “Kinetic behavior of nitrogen penetration into indium double layer improving the smoothness of InN film”, Journal of Applied Physics 111, 113528 (2012).
D. J. Cai, M. A. L. Marques and F. Nogueira, “pH sensitivity of color shift of firefly chromophore due to electrostatic field from neighboring water-ions”, Luminescence 27, 103 (2012).
B. B. Zhang, W. Lin, S. P. Li, Y. Zheng, Xu. Yang, D. J. Cai*, and J. Y. Kang, “Ohmic contact to n-AlGaN through bonding state transition at TiAl interface”, Journal of Applied Physics 111, 113710 (2012).
D. J. Cai, M. A. L. Marques and F. Nogueira, “Accurate color tuning of firefly chromophore by modulation of local polarization electrostatic fields”, Journal of Physical Chemistry B 115, 329 (2011).
D. J. Cai, M. A. L. Marques, B. F. Milne and F. Nogueira, “Bioheterojunction Effect on Fluorescence Origin and Efficiency Improvement of Firefly Chromophores”, Journal of Physical Chemistry Letters, 1, 2781 (2010).
Funds&Project
DUV-LED(2011~2013)National High Technology Research and Development Program ¥ 800 K
ZnO/ZnSe solar cell(2011~2013)Research Fund for the Doctoral Program of Higher Education ¥ 500 K
Nitride nanowires and quantum confinement(2012~2014)Foundation for University Key Teacher by the Ministry of Education ¥ 900 K
AlGaN QWs and abruptness improvement(2013~2015)National Natural Science Foundation ¥ 300 K
Core-shell alloy Cu nanowires and DUV transparent electrodes(2016~2019)National Natural Science Foundation ¥ 800 K
Courses
LED and Photovoltaic system
Defects in semiconductors
Lectrues on semiconductor science and technology
Appreciation of Peking opera
姓名 Cai Duanjun 职称职务 Professor
邮箱 dcai@xmu.edu.cn 办公室 R326, Jiageng Building #4, Xiamen u
电话 个人主页
其他信息 研究方向岗位职责 (1)3D nanostructured semiconductor materials (GaN and ZnO nanorod array) and advanced optoelectronic devices
(2)Superfine metals nanowires (pure and core-shell Cu nanosilks) and transparent conductive films
(3)2D semiconductor films (h-BN atomic layers) and related optoelectronic devices
(4)Nitride semiconductors and Deep-UV LEDs
(5)Advanced nano-scopic characterization techniques
(6)Bioluminescent proteins (firefly emitter)
(7)First-principles calculations for multifunctional materials
教育和工作经历 1996-2000 B. Sc. in Physics, Department of Physics, Xiamen University, China
2000-2006 Ph. D. in Condensed Matter Physics, Department of Physics, School of Physics and Mechanical & Electrical Engineering, Xiamen University, China
Thesis : Strain related effects of GaN based semiconductor heterostructures    Supervisor: Professor Junyong Kang
2006-2008  Postdoctoral fellow, Department of Physics, National Taiwan University, Taipei, Taiwan
2008-2010 Postdoctoral Researcher, Department of Physics, University of Coimbra, Coimbra, Portugal & Laboratoire de Physique de la Matière Condensée et Nanostructures, Université Lyon I, Villeurbanne Cedex, France.
2011-2015 Associate Professor, School of Physics and Mechanical & Electrical Engineering, Xiamen University, China
2013- Adjunct Associate Professor, Institute of Photonics and Optoelectronics, National Taiwan University, Taiwan
2015-  Professor, College of Physical Science and Technology, Xiamen University, China
2016-   Visiting scholar, Department of Chemistry, Duke University, U.S.A.
代表性文章或专著 T. C. Zheng, W. Lin, R. Liu, D. J. Cai, J. C. Li, S. P. Li and J. Y. Kang*, “Improved p-type conductivity in Al-rich AlGaN using multidimensional Mg-doped superlattices”, Scientific Reports (2016, in press).
H. C. Wang, H. M. Xu, C. P. Wu, A. M. Soomro, H. Z. Guo, T. B. Wei, S. P. Li, J. Y. Kang, and D. J. Cai*, “Family of Cu@metal nanowires network for transparent electrodes on n-AlGaN”, Physica Status Solidi B (2016, in press).
C. P. Wu, A. M. Soomro, F. P. Sun, H. C. Wang, C. Liu, X. D. Yang, J. Y. Kang, and D. J. Cai*, “Seven-inch large-size synthesis of monolayer hexagonal BN film by low pressure CVD”, Physica Status Solidi B (2016, in press).
H. M. Xu, H. C. Wang, C. P. Wu, N. Lin, A. M. Soomro, H. Z. Guo, C. Liu, X. D. Yang, Y. P. Wu, D. J. Cai*, and J. Y. Kang, "Direct synthesis of graphene 3D-coated Cu nanosilks network for antioxidant transparent conducting electrode", Nanoscale 7, 10613–10621 (2015).
X. H. Chen, H. M. Xu, N. Lin, F. C. Xu , H. Y. Chen, D. J. Cai* and J. Y. Kang, "Ideal square quantum wells achieved in AlGaN/GaN superlattices using ultrathin blocking-compensation pair", Applied Physics Letters 106,111604 (2015).
D. J. Cai*, N. Lin, H. M. Xu, C. H. Liao and C. C. Yang, “Extraordinary N atom tunneling in formation of InN shell layer on GaN nanorod m-plane sidewall", Nanotechnology 25, 495705 (2014).
X. L. Zhuo, J. C. Ni, J. C. Li, W. Lin, D. J. Cai, S. P. Li, and J. Y. Kang, “Band engineering of GaN/AlN quantum wells by Si dopants”, Journal of Applied Physics 115, 124305 (2014).
T. C. Zheng, W. Lin, D. J. Cai, W. H. Yang, W. Jiang, H. Y. Chen, J. H. Li, S. P. Li and J. Y. Kang, "High Mg effective incorporation in Al-rich AlxGa1 − xN by periodic repetition of ultimate V/III ratio conditions", Nanoscale Research Letters 9, 40 (2014).
J. Zhou, Q. C. Huang, J. C. Li, D. J. Cai*, and J. Y. Kang, “The InN epitaxy via controlling In bilayer”, Nanoscale Research Letters 9, 5 (2014).
N. Lin, J. J. Wu, H. M. Xu, N. L. Liu, T. C. Zheng, W. Lin, C. Liu and D. J. Cai*, “In situ self-release of thick GaN wafer from sapphire substrate via graded strain field engineering”, Applied Physics Letters 104, 012110 (2014).
H. Z. Guo, N. Lin, Y. Z. Chen, Z. W. Wang, Q. S. Xie, T. C. Zheng, N. Gao, S. P. Li, J. Y. Kang, D. J. Cai* and D. L. Peng, “Copper Nanowires as Fully Transparent Conductive Electrodes”, Scientific Reports 3, 2323 (2013).
D. J. Cai*, M. A. L. Marques, and F. Nogueira, “Full Color Modulation of Firefly Luciferase through Engineering with Unified Stark Effect”. Journal of Physical Chemistry B 117 , 13725–13730 (2013).
D. J. Cai­*, X. H. Chen­, H. M. Xu­, N. Lin­, F. C. Xu­, and H. Y. Chen, “Abruptness Improvement of the Interfaces of AlGaN/GaN Superlattices by Cancelling Asymmetric Diffusion”,Japanese Journal of Applied Physics 52, 08JB30 (2013).
W. Lin, W. Jiang, N. Gao, D. J. Cai*, S. P. Li, and J. Y. Kang, “Optical isotropization of anisotropic wurtzite Al-rich AlGaN via asymmetric modulation with ultrathin (GaN)m/(AlN)n superlattices”, Laser & Photonics Reviews 7, 572 (2013).
X. H. Chen, N. Lin, D. J. Cai*, Y. Zhang, H. Y. Chen, and J. Y. Kang, “Symmetrically abrupt GaN/AlGaN superlattices by alternative interface–interruption scheme”, Journal of Materials Research 28, 716 (2013).
Q. C. Huang, S. P. Li, D. J. Cai*, and J. Y. Kang, “Kinetic behavior of nitrogen penetration into indium double layer improving the smoothness of InN film”, Journal of Applied Physics 111, 113528 (2012).
D. J. Cai, M. A. L. Marques and F. Nogueira, “pH sensitivity of color shift of firefly chromophore due to electrostatic field from neighboring water-ions”, Luminescence 27, 103 (2012).
B. B. Zhang, W. Lin, S. P. Li, Y. Zheng, Xu. Yang, D. J. Cai*, and J. Y. Kang, “Ohmic contact to n-AlGaN through bonding state transition at TiAl interface”, Journal of Applied Physics 111, 113710 (2012).
D. J. Cai, M. A. L. Marques and F. Nogueira, “Accurate color tuning of firefly chromophore by modulation of local polarization electrostatic fields”, Journal of Physical Chemistry B 115, 329 (2011).
D. J. Cai, M. A. L. Marques, B. F. Milne and F. Nogueira, “Bioheterojunction Effect on Fluorescence Origin and Efficiency Improvement of Firefly Chromophores”, Journal of Physical Chemistry Letters, 1, 2781 (2010).
科研基金及项目 DUV-LED(2011~2013)National High Technology Research and Development Program ¥ 800 K
ZnO/ZnSe solar cell(2011~2013)Research Fund for the Doctoral Program of Higher Education ¥ 500 K
Nitride nanowires and quantum confinement(2012~2014)Foundation for University Key Teacher by the Ministry of Education ¥ 900 K
AlGaN QWs and abruptness improvement(2013~2015)National Natural Science Foundation ¥ 300 K
Core-shell alloy Cu nanowires and DUV transparent electrodes(2016~2019)National Natural Science Foundation ¥ 800 K
任教课程 LED and Photovoltaic system
Defects in semiconductors
Lectrues on semiconductor science and technology
Appreciation of Peking opera
招生方向 荣誉奖励