1.Formation of GaAs hollow above InAs quantum dots.
  SPIE, 74-77, 2004
2.Self-assembled InAs quantum dots formed by molecular beam epitaxy at low temperature and postgrowth    annealing.
  J. Appl. Phys.2003,93,5953.
3.Low-temperature growth of self-assembled InAs dots on GaAs by molecular beam epitaxy.
  J. Crystal Growth.2003,251,135.
4.MBE/MEE Growth and Characterization of C60 Doped GaAs.
  J. Crystal Growth.2001,227-228,93.