Publications
1.Unique and Tunable Photodetecting Performance for Two-Dimensional Layered MoSe2/WSe2 p-n Junction on the 4H-SiC Substrate Gao Wei; Zhang Feng*; Zheng Zhaoqiang; Li Jingbo* ACS Applied Materials & Interfaces, 11(21), pp 19277-19285, 2019-5-3.
2.A Novel Silicon Carbide Accumulation Channel Injection Enhanced Gate Transistor With Buried Barrier Under Shielding Region Wen, Zhengxin; *Zhang, Feng; Shen, Zhanwei;Tian, Lixin; Yan, Guoguo; Liu, Xingfang; Wang, Lei; Zhao, Wanshun; Sun, Guosheng; Zeng, Yiping, IEEE Electron Device Letters, 38(7), pp 941-944, 2017-7
3.Atomic Layer Deposition of BiFeO3 Thin Films Using beta-Diketonates and H2O,*Zhang, Feng; Sun, Guosheng; Zhao, Wanshun; Wang, Lei; Zeng, Liu; Liu,Shengbei; Liu, Bin; Dong, Lin; Liu, Xingfang; Yan, Guoguo; Tian, Lixin; Zeng, Yiping, Journal of Physical Chemistry C, 117(46), pp 24579-24585,2013-11-21
4.High-Performance 4H-SiC-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors With SiO2 and Al2O3/SiO2 Films, *Zhang, Feng; Sun, Guosheng; Huang, Huolin; Wu, Zhengyun; Wang, Lei; Zhao,Wanshun; Liu, Xingfang; Yan, Guoguo; Zheng, Liu; Dong, Lin; Zeng, Yiping, IEEE Electron Device Letters, 32(12), pp 1722-1724, 2011-12
5.High-performance 4H-SiC based metal-semiconductor-metal ultraviolet photodetectors with Al2O3/SiO2 films, Zhang, Feng; Yang, Weifeng; Huang, Huolin; Chen, Xiaping; Wu, *Zhengyun; Zhu, Huili; Qi,Hongji; Yao, Jianke; Fan, Zhengxiu; Shao, Jianda, Applied Physics Letters,92(25), pp 251102, 2008-6-23
